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Klevv DDR4 2x8GB 3200MHz Hynix CJR Laptop RAM SODIMM RAM XMP RAM Overclockable



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lab501 » AMD Ryzen 3000 DDR4 Scaling – Part II – Samsung B-Die vs Micron E-Die vs Hynix CJR – English version

Scris de: Monstru, in categoria: Featured Articles, Procesoare & Chipseturi, in 24 September, 2019.

Samsung B-Die vs Micron E-Die vs Hynix CJR

One of the main changes that came with the launch of the X570 chipset, along with the launch of the third generation Ryzen processors, was the way the CPU communicates with the memory. Due to the changes implemented in the Zen2 architecture, along with the X570 platform, we can now reach much higher clocks for RAM, which was hard to imagine for the Zen and Zen + generations.

For this reason, I spent a good part of July analyzing the way in which performance scales with frequency and timings, in an attempt to help you get an accurate opinion about what kind of configuration is right for this platform. The results of these tests can be consulted here, in the first part of the scaling study, which I warmly recommend you to read if you have not already done so, because that is where I explained the most important elements of the memory / processor communication process.

However, even though we published one the largest AMD Ryzen 3000 RAM scaling studies, the results of this study were based on a single type of memory, you guessed it, equipped with Samsung B-Die ICs. Basically, using the same memory kit, we tried to analyze the impact that clocks, timings, synchronous and asynchronous operating modes have on the performance, running a large number of tests.

Thus, we found that in order to achieve maximum performance we must use a 1:1 configuration with the highest clocks possible, with tight timings. Obviously, in daily use, we will not lose too much performance if we use a DDR4 3600 16-16-16 or a DDR4 3200 14-14-14 memory kit, the biggest differences being encountered in AIDA, not in games or real-life applications. Of course, the maximum performance for the AMD Ryzen 9 3900X CPU is a 1:1 DDR4 3800 configuration with tight timings – 1900MHz fClk being the highest setting where our CPU is fully stable.

However, even though we tried to offer as much information as possible regarding this subject and we hope we helped you in choosing the right memory kit, it was clear that the first part of our study did not deal with all aspects of this issue, leaving a series of questions without answer. How do RAM kits equipped with other ICs behave? How does high density RAM behave? What happens if we use 4 memory sticks?

Well, as soon as we finished the first part of the scaling study, we started working on the second part. First, we tested Samsung B-Die dual-rank memory kits, as well as memory kits equipped with Hynix CJR ICs, respectively Micron E-Die ICs, and then we published individual reviews for each kit. Then, we tested the behavior of 4 memory kits equipped with Samsung B-Die ICs, and last but not least we used a high-end memory kit from GSkill in order to hit DDR4 4800.

What you see in this article is how I spent most of this summer, testing different RAM kits, along with AMD Ryzen 9 3900X and the excellent MSI X570 Godlike motherboard. Therefor, if in the first part we tried to see which clocks and timings combinations offer the best performance, today we will see if we can use cheaper RAM in order to achieve similar levels of performance with Samsung B-Die kits. Buckle up, because this is going to be a long ride. And, of course, please excuse my english, which is obviously not my native language.


Tests of Samsung, Micron and Hynix memory chips on AMD Ryzen 3000

processors Ryzen 3000 processors have been on the market for several weeks, and they have become very popular among our readers. Memory manufacturers have announced special brackets for the new Ryzen processors and X570 motherboards. However, no one bothers to use these memory modules with B450 and X470 motherboards, except that manual settings may be required there.

This review was prepared by our forum member Reous.

Despite external differences, such memory sticks are most often equipped with DRAM chips, which have shown good compatibility with AMD platforms. As a rule, these are 8-Gb chips from Samsung, SK Hynix and Micron. We got the opportunity to test several G.Skill and Crucial kits.

Below is a brief overview of the three most common chips on the market:

Samsung 8Gb B-Die:

These K4A8G085WB chips are manufactured using a 20nm process. Previously, they have shown overclocking friendliness, with clock speeds scaling almost linearly with voltage and latencies. Compared to the chips below, it is possible to achieve lower latency, which has a positive effect on performance. Unfortunately, the production of B-Die chips has been discontinued, so they will leave the market in the coming months. The corresponding forum thread lists memory strips on B-Die chips.

SK Hynix 8Gb C-Die:

The 8Gb type H5AN8G8NCJR chips are manufactured in 18nm and are third generation after MFR and AFR. Overclocking potential is high, but compared to the Samsung B-Die, you will have to sacrifice delays such as tRCDRD, tRP or tRFC. These chips, as a rule, are found on brackets with the declared mode up to DDR4-3600. Here we will also give a link to a forum thread where you can learn more about the strips on SK Hynix chips.

Micron 8 Gb E-Die:

Most often on the market you can find memory sticks on 8 Gb chips MT40A1G8SA-075:E (D9VPP), which are manufactured using a 19-nm process technology. At the beginning of the year, they caused a sensation because they showed record overclocking values. Due to good overclocking capabilities and low price, these trims are recommended for purchase. But here, compared to Samsung B-Die chips, you will have to sacrifice some timings, such as tRCDRD or tRFC. See the forum thread for more information.

Test configuration
CPU AMD Ryzen 7 3700X (fixed at 4.1 GHz)
Motherboard ASUS ROG Strix B450-I Gaming
ASUS ROG Strix X570-E Gaming
HDD ADATA XPG SX6000 Lite 128GB M.2
Samsung SSD 850 EVO 250GB
OS Windows 10 (Build 1903)
Video card XFX Radeon R9 270X Black Edition
RAM G. Skill Trident Z DDR4-3600 CL15-15-15
Samsung 8Gbit B-Die, Single Rank
G.Skill Trident Z DDR4-4000 CL19-19-19
Samsung 8Gbit B-Die, Dual Rank
Crucial Ballistix Elite DDR4-4000 CL18-19-19
Micron 8Gbit E-Die, Single Rank
Crucial Ballistix Sport DDR4-3000 CL15-16-16
Micron 8Gbit E-Die, Dual Rank
G.Skill Trident Z Neo DDR4-3600 CL16-19-19
Hynix 8Gbit C-Die, Single Rank
G.Skill SniperX Camouflage DDR4-3600 CL19-20-20
Hynix 8Gbit C-Die, Dual Rank

All tests were run at a fixed CPU frequency of 4.10 GHz at 1.325 V. This step was taken to ensure that clock speeds do not change depending on CPU temperature, which can adversely affect the result. For clock speeds up to and including DDR4-3733, the ROG Strix X570-E Gaming motherboard was used, higher clock speeds from DDR4-4200 were obtained on the ROG Strix B450-I Gaming motherboard. Versions with the ComboPi ABB patch were used as BIOS. We tested 2x 8GB single-rank and 2x 16GB dual-rank sticks on Samsung, SK Hynix and Micron memory chips.

We ran various tests in DDR4-3200, DDR4-3600, DDR4-3733, and DDR4-4200+ when available. All kits with the exception of the peer-to-peer Micron could not provide clock speeds higher than DDR4-4200, either the memory chips did not allow such high frequencies, or the BIOS was not optimized. We set the maximum VDIMM voltage to 1.50V to optimize latency. All timings are shown in the following table.

<>Samsung, Micron and Hynix Memory Chip Benchmarks on AMD Ryzen 3000 9 Processors0016 Overclocking Infinity Fabric on DDR4-3200

VEGA 56/64 extra downvolt | Page 8

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