V nand flash: What’s the difference between NAND and V-NAND? — Answers

Understanding the Basics – NVM Express

By Hrishikesh Sathawane, Director of Product Planning, Samsung and Mike Allison, Sr. Director of Products – Standards, Samsung

As the need for high-speed data storage and memory solutions continues to grow, developments in non-volatile storage protocols will continue to evolve faster than traditional storage protocols like SATA. When navigating these higher speed and lower latency protocols, you might be wondering, what the difference is between NVM Express® (NVMe®) technology and NAND? NVMe technology is not a competitor to NAND. In fact, NVMe technology provides an interface and protocol that fully unleashes the power of NAND. In this blog, we’ll look at how NVMe architecture works with NAND and provide clarity for those who have questions about “NVMe vs. NAND”.

What is NVMe Technology?

NVMe technology defines how host software communicates with non-volatile memory across multiple transports like a PCI Express® (PCIe®), RDMA, TCP and more. It is the industry standard for solid state drives (SSDs) in all form factors. In a first wave, A solid-state drive (SSD) using NVMe over PCIe® removes older protocol bottlenecks that were defined for hard disk drives (HDDs) and unleashes significant growth in data transfer rates and IOPS performance over other interfaces supporting SSDs such as SATA.

What is NAND?

NAND is a type of flash memory that reduces erase and write times lower than hard drive, and requires less chip area per cell, which allows for more storage density and lower cost. New 3D NAND technology is increasing performance, growing capacity and raising power efficiency of SSDs. 3D NAND stacks memory cells on top of each other, as opposed to 2D, which has a singular layer of cells. Along with PCIe and NVMe architectures, NAND is also able to support new applications that demand this higher physical layer storage interface performance. NAND technology can be found in SSDs and most commonly in smartphones.

NVMe and NAND: How Do These Technologies Work Together?

In the second wave, The NVM Express 2. 0 library of specifications further exposes the power of NAND by defining and standardizing the various efficient I/O Command Sets specifications, including the NVM, Zoned Namespace and Key Value command sets. As NVMe technology evolves, NVMe-oF Ethernet-SSDs will further remove other system level bottlenecks to bring the NAND performance out to the servers where applications are running.

There are many benefits to NAND based NVMe SSDs. They contain the ability to support a mixture of form factors across the industry from M.2, U.2/2.5” and EDSFF. These SSDs also provide the support for PCs, gaming, data centers and Enterprise businesses.

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The future is bright for both NVMe architecture and NAND. As both technologies evolve, there are more opportunities for faster performance and innovations from software developers. For more insights from NVM Express members and to learn more about NVMe technology, check out more NVM Express blogs. To learn more about Samsung, please visit our website.

What Is 3D NAND and How Does It Work?

What Is 3D NAND?

3D NAND is also known as vertical NAND (V-NAND). It’s a type of non-volatile flash memory in which the flash memory cells in a transistor die are stacked vertically to increase storage density. The more layers of cells you can stack on a single transistor die without significantly compromising data integrity, the greater your storage density will be.

How Does 3D NAND Work?

A typical flash memory chip works by storing data as voltage states within an electrical circuit. To understand how 3D NAND works, it’s important to first understand the inner workings of a NAND cell.

What does NAND stand for?

NAND stands for “NOT AND,” which refers to the Boolean operator or logic gate that governs the internal circuit of a NAND cell. The NAND operator produces a FALSE value only if both inputs are TRUE.

Basics of flash memory operation

The most basic NAND cell is a transistor composed of two gates:

A control gate, which is electrically connected to the rest of the circuit, allowing the cell to be programmed.
A floating gate, which is electrically isolated from the circuit, allowing it to store charge without power.

The floating gate is sandwiched between two isolation layers, with the control gate on top and the channel linking source and drain below.

To program a NAND cell, a voltage needs to be applied to the control gate, which allows electrons in the channel to overcome the threshold voltage of the first isolation layer and tunnel into the floating gate. When the floating gate is charged, data is effectively stored, and the cell’s binary value is set to zero.

To erase the cell, a high voltage needs to be applied across the source and drain to induce a negative voltage at the control gate. This allows the electrons trapped in the floating gate to tunnel back across the bottom isolation layer into the channel, effectively erasing the cell and setting its binary value to 1.

Why stack NAND cells vertically?

As cell size decreases so too does the distance between cells on a single transistor plane. This can be especially problematic when you consider that flash memory works by storing voltage states within a single transistor cell. Electrons leaking out of the cells wouldn’t be very good for persistent memory storage. Stacking NAND cells vertically into layers offers several advantages, most notably the ability to space out transistor cells to avoid interference from adjacent cells. This improves the stability and longevity of the cell.

Where does 3D NAND fit in the evolution of flash?

3D NAND technology has played a major role in helping the industry keep pace with Moore’s Law despite the physical limitations of making cells smaller. Here’s a brief overview of how the technology has evolved over time:

Single-level cell (SLC) flash: One bit per cell, two possible voltage states
Multi-level cell (MLC) flash: Two bits per cell, four possible voltage states
Triple-level cell (TLC) flash: Three bits per cell, eight possible voltage states
Quad-level cell (QLC) flash: Four bits per cell, 16 possible voltage states

With each subsequent generation, you increase the number of bits per cell by doubling the number of possible voltage states. As you might imagine, the complexity of dealing with multiple voltage states on a single cell requires greater electrical precision, which can translate into a reduction in the performance and longevity of the NAND device.

As a general rule, SLCs are the fastest and most stable, while QLCs can give you the greatest capacity. That said, it’s important to note that this trade-off between performance and endurance is relative. Flash is still orders of magnitude more performant than HDDs, and as technology improves, so too does the stability of higher-level cells. Fears of endurance limitations of TLC NAND were addressed over time, allowing today’s data centers to enjoy the high performance, reliability, and speed of modern TLC NAND.

What Are the Benefits of 3D NAND?

Now that we’ve covered the basics of how 3D NAND cells work, let’s look at the advantages 3D NAND offers. 3D NAND allows you to:

Fit more flash memory cells on a single chip for greater capacity.
Take advantage of the dimensional freedom to optimally place cells to avoid interference and electron leaks for greater cell reliability.
Store more voltage states, and therefore bits, per individual cell for even greater capacity.

What Are the Disadvantages of 3D NAND?

As we mentioned earlier, managing all those voltage states isn’t easy. The more bits you can cram per cell, the greater the electrical precision required to perform read/write operations reliably.

This reality manifests itself as the following disadvantages:

Higher manufacturing costs
Trade-off between capacity and the reliability and longevity of the cell

How Reliable Is 3D NAND SSD?

In a one-to-one comparison with 2D NAND, 3D NAND boasts better performance, speed, power consumption, endurance, and cost efficiency. On the other hand, it should be noted that architectures exist that employ stacking layers of 2D NAND in MLC configuration. Such systems can compete with 3D NAND architectures. This is why it’s important to look at the reliability of a total storage system on a case-by-case basis rather than make blanket assumptions based on components alone.

How Pure Storage Leverages 3D NAND to Deliver Custom Solutions for Your Needs

As a pioneer in all-flash storage solutions, Pure Storage® has relied on 3D NAND technology to develop powerful all-flash storage arrays that can compete with the costs of traditional spinning disk drives for a number of applications. These include:

FlashArray//X: An all-flash storage area network that leverages TLC NAND to provide high-performance block storage for Tier 0 and Tier 1 applications.
FlashArray//C: A capacity-optimized all-flash storage solution that leverages QLC flash to deliver all-flash performance at a cost per capacity comparable to hybrid and HDD storage arrays.
FlashBlade®: A scale-out all-flash storage solution that delivers unified fast file and object (UFFO) storage.

Ready to accelerate your data storage with the massive parallelism and speed of 3D NAND storage? See how Pure Storage products and solutions can help you with your data center needs.

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The third powerful flare occurred on the Sun in ten days

https://ria.ru/20230111/solntse-1844076911.html

The third powerful flare occurred on the Sun in ten days

The third powerful flare occurred on the Sun — RIA Novosti, 01/11/2023

The third powerful flare in ten days occurred on the Sun

Another powerful flare (of class X) occurred on the Sun last night, according to the website of the Solar Astronomy Laboratory of IKI and ISEF. RIA Novosti, 01/11/2023

2023-01-11T11: 48

2023-01-11T12: 22

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MOSCOW, January 11 — RIA Novosti. Another powerful flare (class X) occurred on the Sun last night, according to the website of the Laboratory of Solar Astronomy of IKI and ISEF. The flare of X1.0 was recorded at about 2:00 Moscow time on January 11. After it, five more flares have already passed — three weak class C and two medium class M. The last time a powerful flare occurred on the Sun in the evening of 9January. According to scientists, this was already the third solar activity in the past ten days. In general, experts called the current surge the strongest since 2017. Such an increase, on the one hand, indicates the approaching maximum of solar activity, the peak of which is expected within the next two or three years. On the other hand, the strong power of solar explosions at such an early stage of the cycle is unexpected, the text says. Scientists have suggested that while there is a local burst of activity, which will be limited in time. In addition, the main center of solar explosions continues to move towards the Earth. If the explosive energy of the Sun is not exhausted by the end of the week, its echo will begin to reach our planet, the Laboratory concluded. Such outbreaks can cause magnetic storms on Earth, which cause power grid failures and also affect the migration routes of birds and animals. Severe storms cause disruption of shortwave communications and navigation systems, as well as power failures in industrial networks.

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MOSCOW, January 11 — RIA Novosti. Another powerful flare (class X) occurred on the Sun last night, according to the website of the Solar Astronomy Laboratory of IKI and ISEF.

An outbreak of X1.0 was recorded around 2:00 Moscow time on January 11th. After it, five more flares have already passed — three weak class C and two medium class M.

January 9, 23:02

A strong flare was recorded on the Sun

Last time a powerful flare occurred on the Sun on the evening of January 9.

According to scientists, this was already the third solar activity in the past ten days. In general, experts called the current surge the strongest since 2017.

46.8%

Yes, I felt worse

41.7%

No, I didn’t notice any changes

11.5%

I doubt that they can affect people at all expected within the next two or three years. On the other hand, the strong power of solar explosions at such an early stage of the cycle is unexpected, the text says.

Scientists have suggested that while there is a local burst of activity, which will be limited in time. In addition, the main center of solar explosions continues to move towards the Earth. If the explosive energy of the Sun is not exhausted by the end of the week, its echo will begin to reach our planet, the Laboratory concluded.

Such flares can cause magnetic storms on Earth, disrupting power systems and affecting the migration routes of birds and animals. Severe storms cause disruption of shortwave communications and navigation systems, as well as power failures in industrial networks.

August 2, 2022, 11:02

A third of Russians do not know that the Earth revolves around the Sun, poll showed

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Sh. Flash is a rapid combustion of a gas-vapor-air mixture above the surface of a combustible substance, accompanied by a short-term visible glow. A flash differs from an explosion in the absence of excess pressure (compression of gases), and from ignition in the impossibility of stable combustion even in the presence of an ignition source. An outbreak becomes possible when the amount of vapors formed above the combustible substance has barely reached the lower concentration limit of flame propagation (LEL), and the evaporation rate turned out to be lower than the burnout rate. A flash may cause ignition due to the heating of the combustible substance.

Ensuring the fire safety of technological processes, along with other solutions and measures, should exclude the possibility of the substances in circulation reaching the flash point.

References: GOST 12.1.044-89. SSBT. Fire and explosion hazard of substances and materials. Nomenclature of indicators and methods for their determination.

Opening (disassembly) of structures
Opening (dismantling) of structures — special actions of the fire brigade personnel, determined by the situation on the fire and carried out in order to: clarify the place of burning; detection of hidden sources of combustion and determination of their boundaries and propagation paths; penetration into objects affected by fire or explosion to ensure the rescue of people, protection and evacuation of property and animals; limiting the spread of fire; the most successful application of fire extinguishing . ..

Counter fell
Counter burning — is the most effective method used to extinguish high and medium-intensity forest fires, as well as low-level forest fires. Allows you to quickly stop the spread of these fires by small forces.
Counter burning (annealing) — burning of ground combustible materials in front of the edge of a forest fire. Annealing is carried out from the boundaries available on the forest area: roads, paths, rivers, mineralized strips and …

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